component

NCE60P04Y

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsnce60p04yfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
nce60p04y / README.md
History Download
Ray Publish 0.1.0 cbdc3dc 10h ago

NCE60P04Y

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L

NCE60P04Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of -1.5 to -3.0 V at ID=-250μA.
2 S passive Source; P-channel MOSFET source terminal, with continuous drain current rated -4 A and body-diode forward current IS of -4 A.
3 D passive Drain; drain-source voltage rated -60 V maximum, continuous drain current -4 A and pulsed drain current -12 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23-3L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.5 -2.2 -3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 106 120 mΩ VGS=-10V, ID=-4A 2
Drain-Source On-State Resistance RDS(ON) 135 170 mΩ VGS=-4.5V, ID=-3A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-4A 2
Diode Forward Current IS -4 A 2
Drain-Source Voltage VDS -60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID -4 A TC=25℃ 1
Pulsed Drain Current IDM -12 A TC=25℃ 1
Maximum Power Dissipation PD 1.5 W TC=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 83.3 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec 1
Forward Transconductance gFS 10 S VDS=-5V,ID=-4A 2
Input Capacitance Clss 930 PF VDS=-30V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 85 PF VDS=-30V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 35 PF VDS=-30V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 8 nS VDD=-30V, RL=7.5Ω, VGS=-10V,RG=3Ω 2
Turn-on Rise Time tr 4 nS VDD=-30V, RL=7.5Ω, VGS=-10V,RG=3Ω 2
Turn-Off Delay Time td(off) 32 nS VDD=-30V, RL=7.5Ω, VGS=-10V,RG=3Ω 2
Turn-Off Fall Time tf 7 nS VDD=-30V, RL=7.5Ω, VGS=-10V,RG=3Ω 2
Total Gate Charge Qg 25 nC VDS=-30,ID=-4A, VGS=-10V 2
Gate-Source Charge Qgs 3 nC VDS=-30,ID=-4A, VGS=-10V 2
Gate-Drain Charge Qgd 7 nC VDS=-30,ID=-4A, VGS=-10V 2
Reverse Recovery Time trr 25 nS TJ = 25°C, IF =- 4A, di/dt = -100A/μs 2
Reverse Recovery Charge Qrr 31 nC TJ = 25°C, IF =- 4A, di/dt = -100A/μs 2

CAD (KiCad official)

  • Symbol: NCE60P04Y
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: nce60p04y-etched.step / nce60p04y-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce60p04y.step / nce60p04y.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 f804184cd993d9c2, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF