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NCE60ND18G

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by adom

Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
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nce60nd18g-etched.glb nce60nd18g: factory component page (tier=lcsc) · Ray 21d ago
nce60nd18g-etched.step nce60nd18g: factory component page (tier=lcsc) · Ray 21d ago
nce60nd18g-hero.glb nce60nd18g: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
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nce60nd18g.glb Publish 0.1.0 · Ray 21d ago
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package.json Publish 0.1.0 · Ray 21d ago
page.json nce60nd18g: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 16d ago
README.md nce60nd18g: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 16d ago

NCE60ND18G

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCE60ND18G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (dual N-channel, VDS 60V, ID 18A).
2 G1 input Gate of MOSFET 1; VGS rated ±20V, threshold 1.2V min to 2.5V max.
3 S2 passive Source of MOSFET 2 (dual N-channel, VDS 60V, ID 18A).
4 G2 input Gate of MOSFET 2; VGS rated ±20V, threshold 1.2V min to 2.5V max.
5 D2 passive Drain of MOSFET 2, tied to the D2 drain pad; VDS 60V max.
6 D2 passive Drain of MOSFET 2, tied to the D2 drain pad; VDS 60V max.
7 D1 passive Drain of MOSFET 1, tied to the D1 drain pad; VDS 60V max.
8 D1 passive Drain of MOSFET 1, tied to the D1 drain pad; VDS 60V max.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 18 A TC=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 12.7 A TC=100℃ 1
Pulsed Drain Current IDM 60 A 1
Maximum Power Dissipation PD 45 W TC=25℃ 1
Single pulse avalanche energy EAS 72 mJ Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 24 35 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(ON) 30 40 mΩ VGS=4.5V, ID=10A 2
Forward Transconductance gFS 11 S VDS=5V,ID=10A 2
Diode Forward Current IS 18 A 2
Thermal Resistance, Junction-to-Case RθJC 3.3 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: NCE60ND18G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: nce60nd18g-etched.step / nce60nd18g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce60nd18g.step / nce60nd18g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 383662fd19519eb3, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF