component
NCE60ND18G
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce60nd18g: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -27,6 +27,30 @@ NCE60ND18G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin des | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | TC=25℃ | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |+| Drain Current-Continuous | ID | | | 18 | A | TC=25℃ | 1 |+| Drain Current-Continuous (TC=100℃) | ID (100℃) | | | 12.7 | A | TC=100℃ | 1 |+| Pulsed Drain Current | IDM | | | 60 | A | | 1 |+| Maximum Power Dissipation | PD | | | 45 | W | TC=25℃ | 1 |+| Single pulse avalanche energy | EAS | | | 72 | mJ | Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 24 | 35 | mΩ | VGS=10V, ID=10A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 30 | 40 | mΩ | VGS=4.5V, ID=10A | 2 |+| Forward Transconductance | gFS | 11 | | | S | VDS=5V,ID=10A | 2 |+| Diode Forward Current | IS | | | 18 | A | | 2 |+| Thermal Resistance, Junction-to-Case | RθJC | | 3.3 | | ℃/W | Note 2 | 1 |+ ## CAD (KiCad official) - Symbol: `NCE60ND18G`
page.json+212−1@@ -185,6 +185,217 @@ "Package": "DFN5X6-8L", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "383662fd19519eb3",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous (TC=100℃)",+ "symbol": "ID (100℃)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12.7,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 72,+ "conditions": "Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 24,+ "max": 35,+ "conditions": "VGS=10V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 30,+ "max": 40,+ "conditions": "VGS=4.5V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 11,+ "typ": null,+ "max": null,+ "conditions": "VDS=5V,ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 3.3,+ "max": null,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +437,4 @@ "visibility": { "public": true }-}+}