# NCE60ND09AS

**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8

NCE60ND09AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (second N-channel device, VDS 60V, ID 9A). |
| 2 | G2 | input | Gate of MOSFET 2, with VGS rated ±20V. |
| 3 | S1 | passive | Source of MOSFET 1 (first N-channel device, VDS 60V, ID 9A). |
| 4 | G1 | input | Gate of MOSFET 1, with VGS rated ±20V. |
| 5 | D1 | passive | Drain of MOSFET 1, with VDS rated 60V and continuous ID of 9A. |
| 6 | D1 | passive | Drain of MOSFET 1, with VDS rated 60V and continuous ID of 9A (tied to pin 5). |
| 7 | D2 | passive | Drain of MOSFET 2, with VDS rated 60V and continuous ID of 9A. |
| 8 | D2 | passive | Drain of MOSFET 2, with VDS rated 60V and continuous ID of 9A (tied to pin 7). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 10 | 15 | mΩ | VGS=10V, ID=9A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 14 | 18 | mΩ | VGS=4.5V, ID=9A | 2 |
| Forward Transconductance | gFS | 25 |  |  | S | VDS=5V,ID=9A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=9A | 2 |
| Diode Forward Current | IS |  |  | 9 | A | Note 2 | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V | TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID |  |  | 9 | A | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) |  |  | 6.4 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 36 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 2.6 | W | TC=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 48 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |

## CAD (KiCad official)

- Symbol: `NCE60ND09AS`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce60nd09as-etched.step` / `nce60nd09as-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce60nd09as.step` / `nce60nd09as.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589835296796934144) (7 pp, sha256 `fdab2ca1c1a4f187`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce60nd09as-datasheet.pdf)