NCE60H10K

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  "slug": "nce60h10k",
  "title": "NCE60H10K",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "NCE60H10K",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "TO-252-2L",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lcsc": "C2992581"
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      "checked_at": "2026-10-09T18:38:33Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
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      "mouser": {
        "pn": null,
        "status": "no match"
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    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; gate-source voltage limit is ±20 V, with VGS(th) of 2 V min to 4 V max at ID=250μA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, also connected to the exposed tab; VDS 60 V max, continuous ID 100 A, pulsed IDM 320 A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; continuous body-diode forward current IS is 100 A max, and VGS drive is referenced to this pin."
      }
    ],
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        "at": "2026-10-09T18:36:29"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
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  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "TO-252-2L",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
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          "typ": null,
          "max": null,
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        {
          "name": "Zero Gate Voltage Drain Current",
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        {
          "name": "Gate-Body Leakage Current",
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          "kind": "electrical",
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          "name": "Gate Threshold Voltage",
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          "typ": 2.85,
          "max": 4,
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          "name": "Drain-Source On-State Resistance",
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          "name": "Diode Forward Voltage",
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        {
          "name": "Diode Forward Current",
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        {
          "name": "Drain Current-Continuous (TC=100℃)",
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          "name": "Pulsed Drain Current",
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          "conditions": "",
          "source_page": 1,
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          "typ": null,
          "max": 812,
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        {
          "name": "Operating Junction and Storage Temperature Range",
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          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
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        },
        {
          "name": "Derating factor",
          "symbol": "",
          "kind": "thermal",
          "unit": "W/℃",
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          "typ": 1.13,
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          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
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          "typ": 0.88,
          "max": null,
          "conditions": "Note 2",
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          "source": "datasheet"
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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