NCE6080AK

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  "title": "NCE6080AK",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "TO-252-2L",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "distributor_links": {
      "lcsc": "C2686569"
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      "checked_at": "2026-10-09T21:56:57Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "deferred",
        "error": "shared DigiKey quota guard: 547 calls left today"
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      "mouser": {
        "pn": null,
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; gate-source voltage is rated at ±20 V maximum, with VGS(th) of 0.8 V min to 1.8 V max at ID=250μA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, the center position and the mounting tab; rated at VDS=60 V, ID=80 A continuous and 320 A pulsed."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; the continuous diode forward current is rated at 80 A."
      }
    ],
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  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "TO-252-2L",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
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          "name": "Drain-Source Voltage",
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          "max": 60,
          "conditions": "TC=25℃",
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        {
          "name": "Gate-Source Voltage",
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        {
          "name": "Drain Current-Continuous",
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          "conditions": "TC=100℃",
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        {
          "name": "Pulsed Drain Current",
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        {
          "name": "Maximum Power Dissipation",
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        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
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          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 390,
          "conditions": "Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω",
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        {
          "name": "Operating Junction and Storage Temperature Range",
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        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
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          "typ": 1.3,
          "max": 1.8,
          "conditions": "VDS=VGS,ID=250μA",
          "source_page": 2,
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        {
          "name": "Drain-Source On-State Resistance",
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          "kind": "electrical",
          "unit": "mΩ",
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        {
          "name": "Diode Forward Current",
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          "typ": null,
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          "conditions": "",
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        {
          "name": "Thermal Resistance, Junction-to-Case",
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          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 1.36,
          "max": null,
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          "source_page": 2,
          "source": "datasheet"
        }
      ]
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    "email": "[email protected]"
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