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NCE6005AN
Public Made by Adomby adom
Wuxi NCE Power Semiconductor Pre-ordered Products, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE6005AN
Wuxi NCE Power Semiconductor · Pre-ordered Products · SOT-23-6L
NCE6005AN from Wuxi NCE Power Semiconductor, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain; connected internally to the other drain pins, with VDS rated 60V and continuous ID of 5A. |
| 2 | D | passive | Drain; connected internally to the other drain pins, with VDS rated 60V and continuous ID of 5A. |
| 3 | G | input | Gate; VGS rated ±20V maximum with threshold of 1.2V min to 2.5V max at ID=250μA. |
| 4 | S | passive | Source; connects to the body diode anode, with diode forward current IS of 5A maximum. |
| 5 | D | passive | Drain; connected internally to the other drain pins, with pulsed drain current IDM of 24A. |
| 6 | D | passive | Drain; connected internally to the other drain pins, with pulsed drain current IDM of 24A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-6L |
| Category | Electronic Tools/Instruments/Consumables |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 26 | 35 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 32 | 45 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Forward Transconductance | gFS | 11 | S | VDS=5V,ID=5A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=5A | 2 | ||
| Diode Forward Current | IS | 5 | A | 2 | |||
| Drain-Source Voltage | VDS | 60 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 5 | A | TA=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 3.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | Note 2 | 1 | ||
| Input Capacitance | Clss | 979 | PF | VDS=30V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 120 | PF | VDS=30V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 100 | PF | VDS=30V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 10 | nS | VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω | 2 | ||
| Turn-on Rise Time | tr | 3 | nS | VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 21 | nS | VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 5 | nS | VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDS=30V,ID=5A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 3.3 | nC | VDS=30V,ID=5A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 5.2 | nC | VDS=30V,ID=5A, VGS=10V | 2 |
CAD (KiCad official)
- Symbol:
NCE6005AN - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
nce6005an-etched.step/nce6005an-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce6005an.step/nce6005an.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
db7ce1e0327cc9f9, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).