component
NCE6003Y
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 29d ago |
| viewers | 29d ago |
| nce6003y-etched.glb | 29d ago |
| nce6003y-etched.step | 29d ago |
| nce6003y-hero.glb | 29d ago |
| nce6003y-hero.overlay.json | 29d ago |
| nce6003y.glb | 29d ago |
| nce6003y.kicad_mod | 29d ago |
| nce6003y.kicad_sym | 29d ago |
| nce6003y.lbr | 29d ago |
| nce6003y.step | 29d ago |
| package.json | 29d ago |
| page.json | 24d ago |
| README.md | 24d ago |
NCE6003Y
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L
NCE6003Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS maximum ±20 V, threshold 1.0 to 2.0 V (VDS=VGS, ID=250μA), gate leakage max ±100 nA. |
| 2 | S | passive | Source; continuous diode forward current IS max 3 A, drain current rated 3 A continuous. |
| 3 | D | passive | Drain; VDS maximum 60 V, ID 3 A continuous and 10 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Pulsed (Note 1) | IDM | 10 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 73.5 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | 65 | V | VGS=0V ID=250μA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.3 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 78 | 105 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 95 | 125 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Forward Transconductance | gFS | 3 | S | VDS=15V,ID=2A | 2 | ||
| Diode Forward Voltage (Note 3) | VSD | 1.2 | V | VGS=0V,IS=3A | 2 | ||
| Diode Forward Current (Note 2) | IS | 3 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE6003Y - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
nce6003y-etched.step/nce6003y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce6003y.step/nce6003y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
b068453a29748d6c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).