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NCE55P30K

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
viewers nce55p30k: viewers · Ray 23d ago
nce55p30k-etched.glb nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce55p30k-etched.step nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce55p30k-hero.glb nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce55p30k-hero.overlay.json nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce55p30k.glb Publish 0.1.0 · Ray 23d ago
nce55p30k.kicad_mod Publish 0.1.0 · Ray 23d ago
nce55p30k.kicad_sym Publish 0.1.0 · Ray 23d ago
nce55p30k.lbr Publish 0.1.0 · Ray 23d ago
nce55p30k.step Publish 0.1.0 · Ray 23d ago
package.json nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json nce55p30k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md nce55p30k: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 19d ago

NCE55P30K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE55P30K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of -2 V min to -4 V max at ID=-250μA.
2 D passive Drain, shown as the short middle lead and the mounting tab; VDS rated -55 V and continuous ID -30 A at TC=25℃.
3 S passive Source; continuous drain current -30 A, body-diode forward current IS -30 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -55 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID -30 A TC=25℃ 1
Drain Current-Continuous ID (100℃) -21 A TC=100℃ 1
Pulsed Drain Current IDM 110 A TC=25℃ 1
Maximum Power Dissipation PD 65 W TC=25℃ 1
Single pulse avalanche energy EAS 420 mJ Note 5: Tj=25℃,VDD=-25V,VG=-20V,L=0.5mH,Rg=25Ω,IAS=29A 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 2.3 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS -55 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-55V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -2 -2.6 -4 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 30 40 mΩ VGS=-10V, ID=-15A 2
Forward Transconductance gFS 8 S VDS=-25V,ID=-16A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=-15A 2
Diode Forward Current IS -30 A 2
Reverse Recovery Time trr 71 nS 2
Reverse Recovery Charge Qrr 170 nC TJ = 25°C, IF = -15A di/dt = 100A/μs(Note3) 2

CAD (KiCad official)

  • Symbol: NCE55P30K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce55p30k-etched.step / nce55p30k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce55p30k.step / nce55p30k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 267356f04ab64868, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF