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NCE55P15K-VB

VBsemi Elec · MOSFETs · TO-252

NCE55P15K-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET, rated for gate-source voltage VGS of ±20 V.
2 D passive Drain terminal, electrically connected to the tab; continuous drain current is rated up to 150 °C junction temperature and pulsed drain current IDM is -100 A.
3 S passive Source terminal, the reference for VGS and the body diode with forward voltage VSD of -1 V to -1.5 V at IF = -19 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM -100 A 1
Avalanche Current, Single Pulse IAS -22 A L = 0.1 mH 1
Repetitive Avalanche Energy, Single Pulse EAS 24.2 mJ 1
Power Dissipation PD 38.5 W TC = 25 °C 1
Power Dissipation PD 2.3 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -125 µA VDS = -60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -20 A VDS -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.095 Ω VGS = -10 V, ID = -10 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.115 Ω VGS = -10 V, ID = -10 A, TJ = 150 °C 2
Forward Transconductance gfs 22 S VDS = -15 V, ID = -10 A 2
Total Gate Charge Qg 26 40 nC VDS = -30 V, VGS = -10 V, ID = -10 A 2
Forward Voltage VSD -1 -1.5 V IF = -19 A, VGS = 0 V 2
Reverse Recovery Time trr 41 61 ns IF = -19 A, di/dt = 100 A/µs 2
Turn-On Delay Time td(on) 8 15 ns VDD = -30 V, RL = 3 Ω, ID -19 A, VGEN = -10 V, Rg = 2.5 Ω 2
Rise Time tr 9 15 ns VDD = -30 V, RL = 3 Ω, ID -19 A, VGEN = -10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 65 100 ns VDD = -30 V, RL = 3 Ω, ID -19 A, VGEN = -10 V, Rg = 2.5 Ω 2
Fall Time tf 30 45 ns VDD = -30 V, RL = 3 Ω, ID -19 A, VGEN = -10 V, Rg = 2.5 Ω 2
Output Capacitance Coss 130 pF VGS = 0 V, VDS = -25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 90 pF VGS = 0 V, VDS = -25 V, f = 1 MHz 2
Gate-Source Charge Qgs 4.5 nC VDS = -30 V, VGS = -10 V, ID = -10 A 2
Gate-Drain Charge Qgd 7 nC VDS = -30 V, VGS = -10 V, ID = -10 A 2
Gate Resistance Rg 7 Ω f = 1 MHz 2
Maximum Junction-to-Ambient, t 10 s RthJA 17 21 °C/W t 10 s 1
Maximum Junction-to-Ambient, Steady State RthJA 45 55 °C/W Steady State 1
Maximum Junction-to-Case RthJC 2.7 3.25 °C/W 1

CAD (KiCad official)

  • Symbol: NCE55P15K-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: nce55p15k-vb-etched.step / nce55p15k-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce55p15k-vb.step / nce55p15k-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 378c1d2743de44df, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF