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NCE50TD120VT

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Wuxi NCE Power Semiconductor IGBT Transistors / Modules, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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NCE50TD120VT

Wuxi NCE Power Semiconductor · IGBT Transistors / Modules · TO-247

NCE50TD120VT from Wuxi NCE Power Semiconductor, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a maximum gate-emitter voltage VGES of ±30 V and a gate threshold voltage VGE(th) of 4.5 V min to 6.0 V max at IC=1mA.
2 C passive Collector, rated for a collector-emitter voltage VCES of 1200 V and a collector current of 100 A at TC=25°C (50 A at TC=100°C).
3 E passive Emitter, the IGBT emitter and co-packed diode anode, which carries a continuous diode forward current of 50 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-247
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: NCE50TD120VT
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: nce50td120vt-etched.step / nce50td120vt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce50td120vt.step / nce50td120vt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (10 pp, sha256 64809e49ebbbebe6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF