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NCE4801

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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page.json nce4801: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 17d ago
README.md nce4801: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 17d ago

NCE4801

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE4801 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (P-channel), with VDS rated -30V and continuous ID of -5A.
2 G2 input Gate of MOSFET 2, with VGS limit of ±12V and threshold VGS(th) of -0.7V min to -1.3V max.
3 S1 passive Source of MOSFET 1 (P-channel), with VDS rated -30V and continuous ID of -5A.
4 G1 input Gate of MOSFET 1, with VGS limit of ±12V and threshold VGS(th) of -0.7V min to -1.3V max.
5 D1 passive Drain of MOSFET 1, with VDS rated -30V and pulsed IDM of -28A.
6 D1 passive Drain of MOSFET 1, with VDS rated -30V and pulsed IDM of -28A (internally common with pin 5).
7 D2 passive Drain of MOSFET 2, with VDS rated -30V and pulsed IDM of -28A.
8 D2 passive Drain of MOSFET 2, with VDS rated -30V and pulsed IDM of -28A (internally common with pin 7).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID -5 A 1
Drain Current-Pulsed IDM -28 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 1
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.7 -1 -1.3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 40 48 mΩ VGS=-10V, ID=-5A 2
Drain-Source On-State Resistance RDS(ON) 45 57 mΩ VGS=-4.5V, ID=-4A 2
Drain-Source On-State Resistance RDS(ON) 60 80 mΩ VGS=-2.5V, ID=-3A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-5A 2

CAD (KiCad official)

  • Symbol: NCE4801
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce4801-etched.step / nce4801-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4801.step / nce4801.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 e3d95dd51433aab8, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF