component

NCE4614-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistornce4614-vbfactory-2.0.0extractor-text

Verified NCE4614-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NCE4614-VB · SOIC-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-syrs2jh2/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.12)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ nce4614-vb.kicad_sym✓ nce4614-vb.kicad_mod✓ nce4614-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers nce4614-vb: viewers · Ray 7d ago
nce4614-vb-etched.glb Publish 0.1.0 · Ray 7d ago
nce4614-vb-etched.step nce4614-vb: factory component page (tier=lcsc) · Ray 7d ago
nce4614-vb-hero.glb nce4614-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
nce4614-vb-hero.overlay.json Publish 0.1.0 · Ray 7d ago
nce4614-vb.glb Publish 0.1.0 · Ray 7d ago
nce4614-vb.kicad_mod Publish 0.1.0 · Ray 7d ago
nce4614-vb.kicad_sym Publish 0.1.0 · Ray 7d ago
nce4614-vb.lbr Publish 0.1.0 · Ray 7d ago
nce4614-vb.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 7d ago

NCE4614-VB

VBsemi Elec · MOSFETs · SOIC-8

NCE4614-VB from VBsemi Elec, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of channel 1; the absolute maximum VGS rating of ±20 V applies to both channels.
2 G1 input Gate of channel 1; the absolute maximum gate-source voltage is ±20 V for both channels.
3 S2 passive Source terminal of channel 2; the absolute maximum gate-source voltage is ±20 V for both channels.
4 G2 input Gate of channel 2; the absolute maximum gate-source voltage is ±20 V for both channels.
5 D2 passive Drain of channel 2; the drain-source voltage rating is given per channel in the absolute maximum ratings table (40 V for the N-channel).
6 D2 passive Second drain lead of channel 2, printed as D2 in the pin list; the drain-source voltage rating is given per channel (40 V for the N-channel).
7 D1 passive Drain of channel 1; the drain-source voltage rating is given per channel in the absolute maximum ratings table (40 V for the N-channel).
8 D1 passive Second drain lead of channel 1, printed as D1 in the pin list; the drain-source voltage rating is given per channel (40 V for the N-channel).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOIC-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage (N-channel) VGS -20 20 V 1
Gate-Source Voltage (P-channel) VGS -20 20 V 1
Continuous Drain Current (N-channel), TC = 25 °C ID 9 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current (P-channel), TC = 25 °C ID -8 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current (N-channel), TC = 70 °C ID 7.6 A TC = 70 °C 1
Continuous Drain Current (P-channel), TC = 70 °C ID -6.8 A TC = 70 °C 1
Continuous Drain Current (N-channel), TA = 25 °C ID 6.8 A TA = 25 °C (note b, c) 1
Continuous Drain Current (P-channel), TA = 25 °C ID -5.6 A TA = 25 °C (note b, c) 1
Continuous Drain Current (N-channel), TA = 70 °C ID 5.4 A TA = 70 °C (note b, c) 1
Pulsed Drain Current (N-channel) IDM 30 A 10 µs pulse width 1
Pulsed Drain Current (P-channel) IDM -30 A 10 µs pulse width 1
Continuous Source-Drain Diode Current (N-channel), TC = 25 °C IS 3.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current (P-channel), TC = 25 °C IS -3.6 A TC = 25 °C 1
Source-Drain Diode Current (N-channel), TA = 25 °C IS 1.6 A TA = 25 °C (note b, c) 1
Source-Drain Diode Current (P-channel), TA = 25 °C IS -1.6 A TA = 25 °C (note b, c) 1
Single Pulse Avalanche Current (N-channel) IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-channel) IAS -20 A L = 0.1 mH 1
Maximum Power Dissipation (N-channel), TA = 25 °C PD 3 W TA = 25 °C (note b, c) 1
Maximum Power Dissipation (P-channel), TA = 25 °C PD 3 W TA = 25 °C (note b, c) 1
Maximum Power Dissipation (N-channel), TA = 70 °C PD 2.28 W TA = 70 °C (note b, c) 1
Maximum Power Dissipation (P-channel), TA = 70 °C PD 2.28 W TA = 70 °C (note b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-channel), t ≤ 10 s RthJA 20 32.5 °C/W t ≤ 10 s (note b, d) 1
Maximum Junction-to-Ambient (P-channel), t ≤ 10 s RthJA 27 32.5 °C/W t ≤ 10 s (note b, d) 1
Maximum Junction-to-Foot (Drain) (N-channel), steady state RthJF 10 20 °C/W steady state 1
Maximum Junction-to-Foot (Drain) (P-channel), steady state RthJF 19 28 °C/W steady state 1
Gate Threshold Voltage (N-channel) VGS(th) 1 2.2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-channel) VGS(th) -0.9 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-channel) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage (P-channel) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 µA VGS = 0 V 2
Zero Gate Voltage Drain Current (P-channel) IDSS -1 µA VGS = 0 V 2
Zero Gate Voltage Drain Current (N-channel), TJ = 55 °C IDSS 10 µA VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current (P-channel), TJ = 55 °C IDSS -10 µA VGS = 0 V, TJ = 55 °C 2
Drain-Source On-State Resistance (N-channel) RDS(on) 0.015 Ω VGS = 10 V, ID = 6.8 A 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.017 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance (N-channel) RDS(on) 0.018 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.022 Ω VGS = -4.5 V, ID = -5 A 2
Forward Transconductance (N-channel) gfs 37 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance (P-channel) gfs 35 S VDS = -15 V, ID = -6.7 A 2
Total Gate Charge (N-channel) Qg 13.3 20 nC VDS = 20 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge (P-channel) Qg 13 20 nC VDS = -20 V, VGS = -10 V, ID = -10 A 2
Total Gate Charge at 4.5 V (N-channel) Qg 6.5 10 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Total Gate Charge at 4.5 V (P-channel) Qg 21.7 33 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A 2
Input Capacitance (N-channel) Ciss 1321 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Input Capacitance (P-channel) Ciss 1345 pF VDS = -20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance (N-channel) Crss 214 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance (P-channel) Crss 245 pF VDS = -20 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge (N-channel) Qgs 2.3 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Gate-Source Charge (P-channel) Qgs 5.6 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A 2
Gate-Drain Charge (N-channel) Qgd 1.7 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Gate-Drain Charge (P-channel) Qgd 9.8 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A 2
Gate Resistance (N-channel) Rg 0.3 1.3 2.6 Ω f = 1 MHz 2
Gate Resistance (P-channel) Rg 1.3 6.4 12.8 Ω f = 1 MHz 2
Body Diode Voltage (N-channel) VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage (P-channel) VSD -0.77 -1.2 V IS = -2 A 3
Pulse Diode Forward Current (N-channel) ISM 40 A 3
Pulse Diode Forward Current (P-channel) ISM -40 A 3

CAD (KiCad official)

  • Symbol: NCE4614-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: nce4614-vb-etched.step / nce4614-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4614-vb.step / nce4614-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 f135b5af27930ffa, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF