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NCE4435

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE4435 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, pins 1-3 are all source.
2 S passive Source terminal of the P-channel MOSFET, pins 1-3 are all source.
3 S passive Source terminal of the P-channel MOSFET, pins 1-3 are all source.
4 G input Gate terminal, VGS rated ±20V maximum, with RDS(on) specified at VGS=-4.5V and -10V.
5 D passive Drain terminal, VDS rated -30V and continuous ID -9.1A at TA=25℃, pins 5-8 are all drain.
6 D passive Drain terminal, VDS rated -30V and continuous ID -9.1A at TA=25℃, pins 5-8 are all drain.
7 D passive Drain terminal, VDS rated -30V and continuous ID -9.1A at TA=25℃, pins 5-8 are all drain.
8 D passive Drain terminal, VDS rated -30V and continuous ID -9.1A at TA=25℃, pins 5-8 are all drain.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -11 A TC=25℃ (TJ=150℃) 1
Continuous Drain Current ID -9 A TC=70℃ (TJ=150℃) 1
Continuous Drain Current ID -9.1 A TA=25℃ (TJ=150℃) 1
Continuous Drain Current ID -7.2 A TA=70℃ (TJ=150℃) 1
Drain Current-Pulsed IDM -50 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 3.1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 40 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 16 20 mΩ VGS=-10V, ID=-9.1A 2
Drain-Source On-State Resistance RDS(ON) 21 35 mΩ VGS=-4.5V, ID=-6.9A 2
Forward Transconductance gFS 10 S VDS=-15V, ID=-9.1A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-2.1A 2

CAD (KiCad official)

  • Symbol: NCE4435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce4435-etched.step / nce4435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4435.step / nce4435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 d105d7949467ae77, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF