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NCE40TD120VT

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Wuxi NCE Power Semiconductor IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistornce40td120vtfactory-2.0.0extractor-text

Verified NCE40TD120VT

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NCE40TD120VT · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-mceytks3/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ nce40td120vt.kicad_sym✓ nce40td120vt.kicad_mod✓ nce40td120vt.step
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Symbol & Footprint

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Contents

README

markdown

NCE40TD120VT

Wuxi NCE Power Semiconductor · IGBTs · TO-247

NCE40TD120VT from Wuxi NCE Power Semiconductor, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the IGBT, with gate-emitter voltage rated at ±30 V and threshold of 4.5 V to 6.0 V at IC=1mA.
2 C passive Collector (also connected to the tab); rated 1200 V collector-emitter voltage and 40 A continuous collector current at TC=100 °C.
3 E passive Emitter; current return terminal of the IGBT and anode of the co-packed diode, with 40 A diode continuous forward current at TC=100 °C.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 1200 V 1
Gate- Emitter Voltage VGES -30 30 V 1
Collector Current IC 80 A 1
Collector Current @TC = 100 °C IC 40 A TC = 100 °C 1
Pulsed Collector Current ICpuls 160 A tp limited by Tjmax 1
Turn-off safe operating area 160 A VCE=1200V, Tj=175°C 1
Diode Continuous Forward Current IF 40 A TC = 100 °C 1
Diode Maximum Forward Current IFM 160 A 1
Power Dissipation PD 468 W TC = 25°C 1
Power Dissipation PD 234 W TC = 100 °C 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 175 °C 1
Maximum Temperature for Soldering TL 260 °C 1
Collector-Emitter Breakdown Voltage V(BR)CES 1200 V VGE=0V, ICE=1mA 2
Collector-Emitter Leakage Current ICES 200 uA VGE =0V, VCE=1200V 2
Gate to Emitter Forward Leakage IGES(F) 200 nA VGE=+30V, VCE=0V 2
Gate to Emitter Reverse Leakage IGES(R) 200 nA VGE=-30V, VCE=0V 2
Collector-Emitter Saturation Voltage VCE(sat) 1.7 1.95 V IC=40A, VGE=15V, Tj=25°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.95 V IC=40A, VGE=15V, Tj=175°C 2
Gate Threshold Voltage VGE(th) 4.5 6 V IC=1mA, VCE=VGE 2
Diode Forward Voltage VFM 2.2 3 V IF=40A 2
Thermal Resistance, Junction to case for IGBT RθJC 0.32 °C/W 2
Thermal Resistance, Junction to case for Diode RθJC 0.61 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 40 °C/W 2

CAD (KiCad official)

  • Symbol: NCE40TD120VT
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: nce40td120vt-etched.step / nce40td120vt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce40td120vt.step / nce40td120vt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (11 pp, sha256 52e17710f4d2b342, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF