NCE40P70K

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  "type": "component",
  "slug": "nce40p70k",
  "title": "NCE40P70K",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "NCE40P70K",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "TO-252-2L",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205182300459008",
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      "lbr": "nce40p70k.lbr"
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    "distributor_links": {
      "lcsc": "C130101"
    },
    "distributor_check": {
      "checked_at": "2026-10-09T12:09:41Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; controls the P-channel MOSFET, with VGS limited to ±20V and VGS(th) of -1.2V to -2.5V at ID=-250μA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, connected to the exposed tab; rated VDS=-40V, continuous ID=-70A and pulsed IDM=-200A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; continuous diode forward current IS is -70A max."
      }
    ],
    "provenance": {
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      "factory_chain": {
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        "cost_usd": 0.2241,
        "at": "2026-10-09T12:07:36"
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        "pages": 7,
        "sha256": "be0835542e333183",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
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        "units": "mm",
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        "seat": "z = 0",
        "extents_mm": [
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          6.5,
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "TO-252-2L",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "be0835542e333183",
      "rows": [
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": -40,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V ID=-250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": -1.2,
          "typ": -1.9,
          "max": -2.5,
          "conditions": "VDS=VGS,ID=-250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
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          "typ": null,
          "max": -1,
          "conditions": "VDS=-40V,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V,VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 7.5,
          "max": 10,
          "conditions": "VGS=-10V, ID=-20A",
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          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
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          "min": null,
          "typ": null,
          "max": -1.2,
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        },
        {
          "name": "Diode Forward Current",
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          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -70,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Voltage",
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          "min": null,
          "typ": null,
          "max": -40,
          "conditions": "TC=25℃",
          "source_page": 1,
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        },
        {
          "name": "Gate-Source Voltage",
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          "typ": null,
          "max": 20,
          "conditions": "",
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        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID",
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          "unit": "A",
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          "typ": null,
          "max": -70,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous (TC=100℃)",
          "symbol": "ID (100℃)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -49.5,
          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -200,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 130,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 1012,
          "conditions": "Note 5: Tj=25℃, VDD=-20V, VG=-10V, L=1mH, Rg=25Ω, IAS=45A",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 0.96,
          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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