component
NCE4080K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
nce4080k: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
ae7b5f7
17d ago
NCE4080K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE4080K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1.2 V min, 1.8 V typ, 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the tab; VDS max 40 V and continuous ID 80 A at TC=25℃. |
| 3 | S | passive | Source; the body diode carries a continuous forward current IS up to 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | 45 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 7 | mΩ | VGS=10V, ID=20A | 2 | ||
| Forward Transconductance | gFS | 15 | S | VDS=10V,ID=20A | 2 | ||
| Input Capacitance | Clss | 5000 | PF | 2 | |||
| Output Capacitance | Coss | 900 | PF | 2 | |||
| Reverse Transfer Capacitance | Crss | 500 | PF | VDS=20V,VGS=0V, F=1.0MHz | 2 | ||
| Diode Forward Current (Note 2) | IS | 80 | A | 2 | |||
| Reverse Recovery Time | trr | 45 | nS | 2 | |||
| Reverse Recovery Charge | Qrr | 50 | nC | TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) | 2 | ||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 80 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 56 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 350 | A | 1 | |||
| Maximum Power Dissipation | PD | 80 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy (Note 5) | EAS | 750 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | 1.88 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
NCE4080K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce4080k-etched.step/nce4080k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce4080k.step/nce4080k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
50705108e8b1dbd8, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCE4080K
**Wuxi NCE Power Semiconductor** · MOSFETs · TO-252-2L
NCE4080K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1.2 V min, 1.8 V typ, 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the tab; VDS max 40 V and continuous ID 80 A at TC=25℃. |
| 3 | S | passive | Source; the body diode carries a continuous forward current IS up to 80 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | 45 | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | | 7 | mΩ | VGS=10V, ID=20A | 2 |
| Forward Transconductance | gFS | 15 | | | S | VDS=10V,ID=20A | 2 |
| Input Capacitance | Clss | | | 5000 | PF | | 2 |
| Output Capacitance | Coss | | | 900 | PF | | 2 |
| Reverse Transfer Capacitance | Crss | | | 500 | PF | VDS=20V,VGS=0V, F=1.0MHz | 2 |
| Diode Forward Current (Note 2) | IS | | | 80 | A | | 2 |
| Reverse Recovery Time | trr | | | 45 | nS | | 2 |
| Reverse Recovery Charge | Qrr | | | 50 | nC | TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) | 2 |
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 80 | A | TC=25℃ | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) | | | 56 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 350 | A | | 1 |
| Maximum Power Dissipation | PD | | | 80 | W | TC=25℃ | 1 |
| Single pulse avalanche energy (Note 5) | EAS | | | 750 | mJ | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | | | 1.88 | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `NCE4080K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `nce4080k-etched.step` / `nce4080k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce4080k.step` / `nce4080k.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588905205248876544) (7 pp, sha256 `50705108e8b1dbd8`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nce4080k-datasheet.pdf)