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Ray nce4080k: specified limits as data (metadata.characteristics, 21 rows from the datasheet) ae7b5f7 17d ago

NCE4080K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE4080K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1.2 V min, 1.8 V typ, 2.5 V max at ID=250μA.
2 D passive Drain, also connected to the tab; VDS max 40 V and continuous ID 80 A at TC=25℃.
3 S passive Source; the body diode carries a continuous forward current IS up to 80 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 7 mΩ VGS=10V, ID=20A 2
Forward Transconductance gFS 15 S VDS=10V,ID=20A 2
Input Capacitance Clss 5000 PF 2
Output Capacitance Coss 900 PF 2
Reverse Transfer Capacitance Crss 500 PF VDS=20V,VGS=0V, F=1.0MHz 2
Diode Forward Current (Note 2) IS 80 A 2
Reverse Recovery Time trr 45 nS 2
Reverse Recovery Charge Qrr 50 nC TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 80 A TC=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 56 A TC=100℃ 1
Pulsed Drain Current IDM 350 A 1
Maximum Power Dissipation PD 80 W TC=25℃ 1
Single pulse avalanche energy (Note 5) EAS 750 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case (Note 2) RθJC 1.88 ℃/W 2

CAD (KiCad official)

  • Symbol: NCE4080K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce4080k-etched.step / nce4080k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4080k.step / nce4080k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 50705108e8b1dbd8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF