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NCE4080

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE4080

Wuxi NCE Power Semiconductor · MOSFETs · TO-220-3L

NCE4080 from Wuxi NCE Power Semiconductor, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with gate threshold of 1.2 V min to 2.5 V max at ID=250μA.
2 D passive Drain, connected to the tab; VDS is 40 V max and continuous ID is 80 A at TC=25℃.
3 S passive Source; continuous body-diode forward current IS is 80 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-220-3L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 5.3 6.5 mΩ VGS=10V, ID=20A 2
Forward Transconductance gFS 15 S VDS=10V,ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 80 A 2
Drain-Source Voltage VDS 40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 80 A TC=25℃ 1
Drain Current-Continuous (100℃) ID (100℃) 56 A TC=100℃ 1
Pulsed Drain Current IDM 350 A TC=25℃ 1
Maximum Power Dissipation PD 90 W TC=25℃ 1
Derating factor 0.6 W/℃ 1
Single pulse avalanche energy EAS 670 mJ Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω,IAS=36A 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.67 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec 2
Input Capacitance Ciss 4010 PF VDS=20V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 750 PF VDS=20V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 390 PF VDS=20V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 11 nS VDD=20V, RL=1Ω, VGS=10V, RG=3Ω 2
Turn-on Rise Time tr 10 nS VDD=20V, RL=1Ω, VGS=10V, RG=3Ω 2
Turn-Off Delay Time td(off) 38 nS VDD=20V, RL=1Ω, VGS=10V, RG=3Ω 2
Turn-Off Fall Time tf 11 nS VDD=20V, RL=1Ω, VGS=10V, RG=3Ω 2
Total Gate Charge Qg 50 nC VDS=20V,ID=20A,VGS=10V 2
Gate-Source Charge Qgs 12 nC VDS=20V,ID=20A,VGS=10V 2
Gate-Drain Charge Qgd 13 nC VDS=20V,ID=20A,VGS=10V 2
Reverse Recovery Time trr 33 nS TJ = 25°C, IF = 20A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 34 nC TJ = 25°C, IF = 20A, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCE4080
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: nce4080-etched.step / nce4080-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4080.step / nce4080.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 1847c3375e30c35b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF