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docs nce4060k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
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nce4060k-etched.glb nce4060k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
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nce4060k-hero.glb nce4060k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
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nce4060k.glb Publish 0.1.0 · Ray 24d ago
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package.json nce4060k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json nce4060k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md nce4060k: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 17d ago

NCE4060K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE4060K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS rated ±20 V maximum, with VGS(th) of 1.2 V min to 2.5 V max at ID=250μA.
2 D passive Drain, also the exposed tab; VDS rated 40 V, continuous ID 60 A, pulsed IDM 200 A.
3 S passive Source; continuous diode forward current IS is 60 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 7.3 13 mΩ VGS=10V, ID=20A 2
Forward Transconductance gFS 15 S VDS=10V,ID=20A 2
Diode Forward Current IS 60 A 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 60 A 1
Drain Current-Continuous ID(100℃) 42 A TC=100℃ 1
Pulsed Drain Current IDM 200 A 1
Maximum Power Dissipation PD 65 W 1
Derating factor 0.43 W/℃ 1
Single pulse avalanche energy EAS 400 mJ Note 5: Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 2.3 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec. 2

CAD (KiCad official)

  • Symbol: NCE4060K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce4060k-etched.step / nce4060k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4060k.step / nce4060k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 b27b593c04f5ce1f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF