component
NCE3420
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| nce3420-etched.glb | 17d ago |
| nce3420-etched.step | 17d ago |
| nce3420-hero.glb | 17d ago |
| nce3420-hero.overlay.json | 17d ago |
| nce3420.glb | 17d ago |
| nce3420.kicad_mod | 17d ago |
| nce3420.kicad_sym | 17d ago |
| nce3420.lbr | 17d ago |
| nce3420.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
NCE3420
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23
NCE3420 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with gate voltages as low as 1.8V supported and an absolute maximum VGS of ±10V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous drain current is rated 6A. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated 20V, continuous current 6A and pulsed current 30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | 6 | A | 1 | |||
| Drain Current-Pulsed | IDM | 30 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V, ID=250μA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 27 | 35 | mΩ | VGS=2.5V, ID=4.0A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 20 | 28 | mΩ | VGS=4.5V, ID=5.0A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A | 2 | ||
| Diode Forward Current | IS | 6 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE3420 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nce3420-etched.step/nce3420-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3420.step/nce3420.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
7ead61b7f7ddd347, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).