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NCE3400X
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Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce3400x: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
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NCE3400X
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23
NCE3400X from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS limited to ±12 V, with RDS(ON) specified down to VGS=2.5V and gate threshold 0.7 to 1.2 V. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous drain current is rated 5.1 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage rated 30 V, continuous current 5.1 A and pulsed current 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 33 | 55 | mΩ | VGS=2.5V, ID=3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 26 | 39 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 24 | 33 | mΩ | VGS=10V, ID=5A | 2 | |
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=5A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=5A | 2 | ||
| Diode Forward Current | IS | 5.1 | A | 2 | |||
| Drain-Source Voltage | VDS | 30 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 5.1 | A | TA=25℃ unless otherwise noted | 1 | ||
| Drain Current-Pulsed | IDM | 20 | A | Note 1: Repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA=25℃ unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 96 | ℃/W | Note 2: Surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
NCE3400X - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nce3400x-etched.step/nce3400x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3400x.step/nce3400x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
aa529fee8d43dfba, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCE3400X
**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-23
NCE3400X from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS limited to ±12 V, with RDS(ON) specified down to VGS=2.5V and gate threshold 0.7 to 1.2 V. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous drain current is rated 5.1 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage rated 30 V, continuous current 5.1 A and pulsed current 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 33 | 55 | mΩ | VGS=2.5V, ID=3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 26 | 39 | mΩ | VGS=4.5V, ID=4A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 24 | 33 | mΩ | VGS=10V, ID=5A | 2 |
| Forward Transconductance | gFS | 10 | | | S | VDS=5V,ID=5A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=5A | 2 |
| Diode Forward Current | IS | | | 5.1 | A | | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current-Continuous | ID | | | 5.1 | A | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Pulsed | IDM | | | 20 | A | Note 1: Repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 1.3 | W | TA=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 96 | | ℃/W | Note 2: Surface mounted on FR4 board, t ≤ 10 sec | 1 |
## CAD (KiCad official)
- Symbol: `NCE3400X`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nce3400x-etched.step` / `nce3400x-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce3400x.step` / `nce3400x.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588947717771313152) (7 pp, sha256 `aa529fee8d43dfba`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nce3400x-datasheet.pdf)