# NCE30TD60BF

**Wuxi NCE Power Semiconductor** · IGBT Transistors / Modules · TO-220F-3

NCE30TD60BF from Wuxi NCE Power Semiconductor, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the IGBT, with VGES rated ±30 V and gate threshold VGE(th) 4.0 V min to 6.0 V max at IC=1 mA. |
| 2 | C | passive | Collector (with antiparallel diode cathode); VCES 600 V, IC 30 A at TC=100°C (TO-220F rating), VCE(sat) 1.7 V typ and 1.9 V max at IC=30 A. |
| 3 | E | passive | Emitter (with antiparallel diode anode); main current return, with IC 30 A at TC=100°C and pulsed collector current 90 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES |  |  | 600 | V |  | 1 |
| Gate-Emitter Voltage | VGES | -30 |  | 30 | V |  | 1 |
| Collector Current | IC |  |  | 60 | A |  | 1 |
| Collector Current @TC = 100°C | IC |  |  | 30 | A | TC = 100°C | 1 |
| Pulsed Collector Current | ICplus |  |  | 90 | A | tp limited by Tjmax | 1 |
| Turn-off safe operating area |  |  |  | 90 | A | VCE=600V, Tj=150°C | 1 |
| Diode Continuous Forward Current @TC = 100°C | IF |  |  | 30 | A | TC = 100°C | 1 |
| Diode Maximum Forward Current | IFM |  |  | 90 | A |  | 1 |
| Power Dissipation @ TC = 25°C | PD |  |  | 35.5 | W | TC = 25°C | 1 |
| Power Dissipation @TC = 100 °C | PD |  |  | 14.2 | W | TC = 100 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 260 | °C |  | 1 |
| Short circuit withstand time | tsc |  |  | 3 | us | VGE=15.0V, VCC≤400V, Allowed number of short circuits<1000, Time between short circuits:≥1.0s, Tj≤150℃ | 1 |
| Thermal Resistance, Junction to case for IGBT | RθJC |  |  | 2.65 | °C /W |  | 2 |
| Thermal Resistance, Junction to case for Diode | RθJC |  |  | 3.9 | °C /W |  | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 78 | °C /W |  | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CES | 600 |  |  | V | VGE=0V, ICE=1mA | 2 |
| Collector-Emitter Leakage Current | ICES |  |  | 4 | uA | VGE =0V, VCE=600V | 2 |
| Gate to Emitter Forward Leakage | IGES(F) |  |  | 200 | nA | VGE=+30V, VCE=0V | 2 |
| Gate to Source Reverse Leakage | IGES(R) |  |  | 200 | nA | VGE=-30V, VCE =0V | 2 |
| Collector-Emitter Saturation Voltage (Tj=25°C) | VCE(sat) |  | 1.7 | 1.9 | V | IC=30A, VGE=15V, Tj=25°C | 2 |
| Gate Threshold Voltage | VGE(th) | 4 | 5 | 6 | V | IC=1mA, VCE=VGE | 2 |
| Diode Forward Voltage | VFM |  | 1.7 | 1.9 | V | IF=30A | 2 |
| Collector-Emitter Saturation Voltage (Tj=150°C) | VCE(sat) |  | 1.9 |  | V | IC=30A, VGE=15V, Tj=150°C | 2 |
| Input Capacitance | Cies |  | 3552 |  | pF | VCE=25V, VGE=0V, f=1MHz | 2 |
| Output Capacitance | Coes |  | 106 |  | pF | VCE=25V, VGE=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Cres |  | 67 |  | pF | VCE=25V, VGE=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 132 |  | nC | VCC=480V, IC=30A, VGE=15V | 2 |
| Gate to Emitter Charge | Qge |  | 28 |  | nC | VCC=480V, IC=30A, VGE=15V | 2 |
| Gate to Collector Charge | Qgc |  | 54 |  | nC | VCC=480V, IC=30A, VGE=15V | 2 |
| Short circuit collector current | IC(SC) |  | 190 |  | A | VGE=15V, VCC≤400V, tSC≤3us, Tj≤150℃ | 2 |
| Turn-on Delay Time | td(ON) |  | 19 |  | ns | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Rise Time | tr |  | 17 |  | ns | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Turn-Off Delay Time | td(OFF) |  | 166 |  | ns | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Fall Time | tf |  | 16 |  | ns | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Turn-On Switching Loss | Eon |  | 0.36 |  | mJ | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Turn-Off Switching Loss | Eoff |  | 0.32 |  | mJ | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Total Switching Loss | Ets |  | 0.68 |  | mJ | VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load | 2 |
| Reverse Recovery Time | Trr |  | 178 |  | ns | Vcc=400V, IF=30A, di/dt=200A/uS | 2 |
| Diode Peak Reverse Recovery Current | IRRM |  | 4 |  | A | Vcc=400V, IF=30A, di/dt=200A/uS | 2 |
| Diode Reverse Recovery Charge | Qrr |  | 0.4 |  | uC | Vcc=400V, IF=30A, di/dt=200A/uS | 2 |

## CAD (KiCad official)

- Symbol: `NCE30TD60BF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888781826478080) (9 pp, sha256 `d540803a2e96f2c3`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce30td60bf-datasheet.pdf)