# NCE30TD60BD

**Wuxi NCE Power Semiconductor** · IGBT Transistors / Modules · TO-263

NCE30TD60BD from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is limited to ±30 V (VGES) and the gate threshold voltage is 4.0 to 6.0 V at IC=1mA. |
| 2 | C | passive | Collector (also the mounting tab); collector-emitter voltage is rated 600 V (VCES) with 60 A continuous collector current and 30 A at TC=100°C. |
| 3 | E | passive | Emitter, which is also the anode of the co-packaged anti-parallel diode; the diode is rated 30 A continuous forward current at TC=100°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES |  |  | 600 | V |  | 1 |
| Gate-Emitter Voltage | VGES | -30 |  | 30 | V |  | 1 |
| Collector Current | IC |  |  | 60 | A |  | 1 |
| Collector Current | IC |  |  | 30 | A | TC = 100°C | 1 |
| Pulsed Collector Current | ICplus |  |  | 90 | A | tp limited by Tjmax | 1 |
| Turn-off safe operating area collector current |  |  |  | 90 | A | VCE=600V, Tj=150°C | 1 |
| Diode Continuous Forward Current | IF |  |  | 30 | A | TC = 100°C | 1 |
| Diode Maximum Forward Current | IFM |  |  | 90 | A |  | 1 |
| Power Dissipation | PD |  |  | 190 | W | TC = 25°C | 1 |
| Power Dissipation | PD |  |  | 76 | W | TC = 100 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 260 | °C |  | 1 |
| Short circuit withstand time | tsc |  |  | 3 | us | VGE=15V, VCC≤400V, Tj≤150°C, time between short circuits ≥1.0s, allowed number of short circuits <1000 | 1 |
| Thermal Resistance, Junction to case for IGBT | RθJC |  |  | 0.65 | °C/W |  | 2 |
| Thermal Resistance, Junction to case for Diode | RθJC |  |  | 1.08 | °C/W |  | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 40 | °C/W |  | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CES | 600 |  |  | V | VGE=0V, ICE=1mA | 2 |
| Collector-Emitter Leakage Current | ICES |  |  | 4 | uA | VGE=0V, VCE=600V | 2 |
| Gate to Emitter Forward Leakage | IGES(F) |  |  | 200 | nA | VGE=+30V, VCE=0V | 2 |
| Gate to Source Reverse Leakage | IGES(R) |  |  | 200 | nA | VGE=-30V, VCE=0V | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.7 | 1.9 | V | IC=30A, VGE=15V, Tj=25°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.9 |  | V | IC=30A, VGE=15V, Tj=150°C | 2 |
| Gate Threshold Voltage | VGE(th) | 4 | 5 | 6 | V | IC=1mA, VCE=VGE | 2 |
| Diode Forward Voltage | VFM |  | 1.7 | 1.9 | V | IF=30A | 2 |
| Input Capacitance | Cies |  | 3552 |  | pF | VCE=25V, VGE=0V, f=1MHz | 2 |
| Output Capacitance | Coes |  | 106 |  | pF | VCE=25V, VGE=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Cres |  | 67 |  | pF | VCE=25V, VGE=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 132 |  | nC | VCC=480V, IC=30A, VGE=15V | 2 |
| Gate to Emitter Charge | Qge |  | 28 |  | nC | VCC=480V, IC=30A, VGE=15V | 2 |
| Gate to Collector Charge | Qgc |  | 54 |  | nC | VCC=480V, IC=30A, VGE=15V | 2 |
| Short circuit collector current | IC(SC) |  | 190 |  | A | VGE=15V, VCC≤400V, tSC≤3us, Tj≤150°C | 2 |
| Turn-on Delay Time | td(ON) |  | 19 |  | ns | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Rise Time | tr |  | 17 |  | ns | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Turn-Off Delay Time | td(OFF) |  | 166 |  | ns | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Fall Time | tf |  | 16 |  | ns | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Turn-On Switching Loss | Eon |  | 0.36 |  | mJ | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Turn-Off Switching Loss | Eoff |  | 0.32 |  | mJ | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Total Switching Loss | Ets |  | 0.68 |  | mJ | VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load | 2 |
| Diode Peak Reverse Recovery Current | IRRM |  | 4 |  | A | IF=30A, di/dt=200A/us | 2 |
| Reverse Recovery Time | Trr |  | 178 |  | ns | IF=30A, di/dt=200A/us | 2 |
| Reverse Recovery Charge | Qrr |  | 0.4 |  | uC | IF=30A, di/dt=200A/us | 2 |

## CAD (KiCad official)

- Symbol: `NCE30TD60BD`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `nce30td60bd-etched.step` / `nce30td60bd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce30td60bd.step` / `nce30td60bd.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912679775293440) (8 pp, sha256 `34d6daa60f9f9bf9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce30td60bd-datasheet.pdf)