component
NCE30P12S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce30p12s: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -26,6 +26,28 @@ NCE30P12S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descript | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | | V | VGS=0V ID=-250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS,ID=-250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 11.5 | 15 | mΩ | VGS=-10V, ID=-10A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 18 | 25 | mΩ | VGS=-4.5V, ID=-7A | 2 |+| Forward Transconductance | gFS | 20 | | | S | VDS=-10V,ID=-10A | 2 |+| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-2A | 2 |+| Drain-Source Voltage | VDS | | | -30 | V | TA=25℃ | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |+| Drain Current-Continuous | ID | | | -12 | A | TA=25℃ | 1 |+| Drain Current-Pulsed (Note 1) | IDM | | | -48 | A | TA=25℃; Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Maximum Power Dissipation | PD | | | 3 | W | TA=25℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | | 41.67 | | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+ ## CAD (KiCad official) - Symbol: `NCE30P12S`
page.json+188−1@@ -178,6 +178,193 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a653162686f1eb04",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": -33,+ "max": null,+ "conditions": "VGS=0V ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-30V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.5,+ "max": -3,+ "conditions": "VDS=VGS,ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 11.5,+ "max": 15,+ "conditions": "VGS=-10V, ID=-10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 25,+ "conditions": "VGS=-4.5V, ID=-7A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VDS=-10V,ID=-10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V,IS=-2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -12,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed (Note 1)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -48,+ "conditions": "TA=25℃; Note 1: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (Note 2)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 41.67,+ "max": null,+ "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +406,4 @@ "visibility": { "public": true }-}+}