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NCE30P12S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE30P12S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE30P12S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3; device is rated VDS = -30V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3 externally on the board. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2 externally on the board. |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum VGS is ±20V, with RDS(ON) specified at VGS=-4.5V and -10V. |
| 5 | D | passive | Drain of the P-channel MOSFET, common with pins 6, 7 and 8; continuous ID is -12A. |
| 6 | D | passive | Drain of the P-channel MOSFET, common with pins 5, 7 and 8; pulsed IDM is -48A. |
| 7 | D | passive | Drain of the P-channel MOSFET, common with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, common with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 11.5 | 15 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18 | 25 | mΩ | VGS=-4.5V, ID=-7A | 2 | |
| Forward Transconductance | gFS | 20 | S | VDS=-10V,ID=-10A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-2A | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -12 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | -48 | A | TA=25℃; Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 41.67 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
NCE30P12S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce30p12s-etched.step/nce30p12s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce30p12s.step/nce30p12s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
a653162686f1eb04, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).