component
NCE30ND07S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE30ND07S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE30ND07S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 30V, ID 7A). |
| 2 | G2 | input | Gate of MOSFET 2, with a gate-source voltage limit of ±20V. |
| 3 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 30V, ID 7A). |
| 4 | G1 | input | Gate of MOSFET 1, with a gate-source voltage limit of ±20V. |
| 5 | D1 | passive | Drain of MOSFET 1 (shorted to pin 6), with a drain-source voltage rating of 30V. |
| 6 | D1 | passive | Drain of MOSFET 1 (shorted to pin 5), with a drain-source voltage rating of 30V. |
| 7 | D2 | passive | Drain of MOSFET 2 (shorted to pin 8), with a drain-source voltage rating of 30V. |
| 8 | D2 | passive | Drain of MOSFET 2 (shorted to pin 7), with a drain-source voltage rating of 30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 7 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 4.95 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Maximum Power Dissipation | PD | 2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 2.1 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18 | 23 | mΩ | VGS=10V, ID=7A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 25 | 40 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=7A | 2 | ||
| Diode Forward Current | IS | 7 | A | Note 2 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | 85 | ℃/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
NCE30ND07S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce30nd07s-etched.step/nce30nd07s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce30nd07s.step/nce30nd07s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
c046caaf47ed0f8b, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).