component
NCE30H15K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| nce30h15k-etched.glb | 17d ago |
| nce30h15k-etched.step | 17d ago |
| nce30h15k-hero.glb | 17d ago |
| nce30h15k-hero.overlay.json | 17d ago |
| nce30h15k.glb | 17d ago |
| nce30h15k.kicad_mod | 17d ago |
| nce30h15k.kicad_sym | 17d ago |
| nce30h15k.lbr | 17d ago |
| nce30h15k.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
NCE30H15K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE30H15K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum, with VGS(th) 1.2 V min to 2.5 V max at 250 μA. |
| 2 | D | passive | Drain, the center lead which is also the exposed tab; VDS 30 V maximum and continuous drain current 150 A at TC=25℃. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 150 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 150 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 105 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 600 | A | 1 | |||
| Maximum Power Dissipation | PD | 130 | W | 1 | |||
| Single pulse avalanche energy | EAS | 1700 | mJ | Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω,IAS=58.5A (Note 5) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | 35 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3 | 4 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 4.4 | 5 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Forward Transconductance | gFS | 32 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Current | IS | 150 | A | 2 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1.15 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
NCE30H15K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce30h15k-etched.step/nce30h15k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce30h15k.step/nce30h15k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
d1a143f1aa95bd4a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).