# NCE30H10K

**Wuxi NCE Power Semiconductor** · MOSFETs · TO-252-2L

NCE30H10K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum. |
| 2 | D | passive | Drain, also the exposed tab; drain-source voltage is rated at 30 V with 100 A continuous drain current. |
| 3 | S | passive | Source; the body diode is rated at 100 A continuous forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 100 | A |  | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) |  |  | 70 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 400 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 110 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 350 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC |  | 1.36 |  | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 4 | 5.5 | mΩ | VGS=10V, ID=20A | 2 |
| Forward Transconductance | gFS | 50 |  |  | S | VDS=10V,ID=20A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=20A | 2 |
| Diode Forward Current | IS |  |  | 100 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCE30H10K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `nce30h10k-etched.step` / `nce30h10k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce30h10k.step` / `nce30h10k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203926588215296) (7 pp, sha256 `ea7f337009c1b417`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce30h10k-datasheet.pdf)