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NCE30H10AK

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE30H10AK

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE30H10AK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) 0.6 V min to 1.2 V max at ID=250μA.
2 D passive Drain, also the exposed tab; VDS rated 30 V, continuous ID 100 A, pulsed IDM 400 A.
3 S passive Source; continuous diode forward current IS is 100 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 100 A 1
Drain Current-Continuous ID (100℃) 70 A TC=100℃ 1
Pulsed Drain Current IDM 400 A 1
Maximum Power Dissipation PD 110 W 1
Single pulse avalanche energy EAS 405 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.36 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.6 0.75 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 3.2 4.5 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 4 6 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 50 S VDS=10V,ID=20A 2
Input Capacitance Clss 3431 PF VDS=15V,VGS=0V, F=1.0MHz (merged condition cell, applied to group) 2
Output Capacitance Coss 472.5 PF VDS=15V,VGS=0V, F=1.0MHz (merged condition cell, applied to group) 2
Reverse Transfer Capacitance Crss 401.7 PF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 11 nS VDD=15V,ID=20A VGS=4.5V,RGEN=1.8Ω (merged condition cell, applied to group) 2
Turn-on Rise Time tr 16 nS VDD=15V,ID=20A VGS=4.5V,RGEN=1.8Ω (merged condition cell, applied to group) 2
Turn-Off Delay Time td(off) 42 nS VDD=15V,ID=20A VGS=4.5V,RGEN=1.8Ω (merged condition cell, applied to group) 2
Turn-Off Fall Time tf 16 nS VDD=15V,ID=20A VGS=4.5V,RGEN=1.8Ω 2
Total Gate Charge Qg 70 nC VDS=15V,ID=20A, VGS=10V (merged condition cell, applied to group) 2
Gate-Source Charge Qgs 4.8 nC VDS=15V,ID=20A, VGS=10V (merged condition cell, applied to group) 2
Gate-Drain Charge Qgd 16.3 nC VDS=15V,ID=20A, VGS=10V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=20A 2
Diode Forward Current IS 100 A 2
Reverse Recovery Time trr 56 nS 2
Reverse Recovery Charge Qrr 110 nC TJ = 25°C, IF = 20A, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCE30H10AK
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce30h10ak-etched.step / nce30h10ak-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce30h10ak.step / nce30h10ak.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 d7dc3535201f729a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF