component
NCE30D0808J
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, DFN-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNCE30D0808J
Wuxi NCE Power Semiconductor · MOSFETs · DFN-6-EP(2x2)
NCE30D0808J from Wuxi NCE Power Semiconductor, in a DFN-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 marked on the bottom view); N-channel, VDS 30V, ID 7.7A. |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20V, threshold 1V min to 3V max at 250μA. |
| 3 | D2 | passive | Drain of MOSFET 2 (also the exposed drain pad D2); VDS rated 30V. |
| 4 | S2 | passive | Source of MOSFET 2; N-channel, ID 7.7A continuous. |
| 5 | G2 | input | Gate of MOSFET 2; VGS rated ±20V, threshold 1V min to 3V max at 250μA. |
| 6 | D1 | passive | Drain of MOSFET 1 (also the exposed drain pad D1); VDS rated 30V. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN-6-EP(2x2) |
| Category | Transistors/Thyristors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 7.7 | A | TC=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 31 | A | Repetitive rating: pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TC=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 | V | VGS=0V ID=250μA, TC=25℃ | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V, TC=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V, TC=25℃ | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 3 | V | VDS=VGS,ID=250μA, TC=25℃ | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 22 | 25 | mΩ | VGS=10V, ID=7A, TC=25℃ | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 28 | 34 | mΩ | VGS=4.5V, ID=5A, TC=25℃ | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=7.7A, TC=25℃ | 2 | ||
| Diode Forward Current | IS | 7.7 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE30D0808J - Footprint:
Package_DFN_QFN:DFN-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: DFN-6-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
nce30d0808j-etched.step/nce30d0808j-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce30d0808j.step/nce30d0808j.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
a73264e200ccb940, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).