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NCE3095K

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE3095K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE3095K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with VGS(th) of 1 V min to 2.2 V max at ID=250μA.
2 D passive Drain (center pin and exposed tab); VDS 30 V max, continuous ID 95 A, pulsed IDM 300 A.
3 S passive Source; diode forward current IS up to 95 A, RDS(ON) below 5.1 mΩ at VGS=10V.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 95 A TC=25℃ 1
Drain Current-Continuous ID(100℃) 67.2 A TC=100℃ 1
Pulsed Drain Current IDM 300 A TC=25℃ 1
Maximum Power Dissipation PD 95 W TC=25℃ 1
Single pulse avalanche energy EAS 150 mJ Note 5: Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 4.1 5.1 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 5.5 8.5 mΩ VGS=4.5V, ID=15A 2
Forward Transconductance gFS 30 S VDS=5V,ID=20A 2
Diode Forward Voltage VSD 0.85 1.2 V VGS=0V,IS=20A 2
Diode Forward Current IS 95 A 2
Reverse Recovery Time trr 47 nS TJ = 25°C, IF = 20A, di/dt = 100A/μs (Note3) 2
Reverse Recovery Charge Qrr 25 nC TJ = 25°C, IF = 20A, di/dt = 100A/μs (Note3) 2
Input Capacitance Clss 1784 PF VDS=15V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 266 PF VDS=15V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 212 PF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 7 nS VDD=5V,ID=20A VGS=10V,RGEN=6Ω 2
Turn-on Rise Time tr 6 nS VDD=5V,ID=20A VGS=10V,RGEN=6Ω 2
Turn-Off Delay Time td(off) 30 nS VDD=5V,ID=20A VGS=10V,RGEN=6Ω 2
Turn-Off Fall Time tf 8 nS VDD=5V,ID=20A VGS=10V,RGEN=6Ω 2
Total Gate Charge Qg 38.4 nC VDS=15V,ID=20A, VGS=10V 2
Gate-Source Charge Qgs 5.8 nC VDS=15V,ID=20A, VGS=10V 2
Gate-Drain Charge Qgd 7.9 nC VDS=15V,ID=20A, VGS=10V 2
Thermal Resistance, Junction-to-Case RθJC 1.58 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: NCE3095K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce3095k-etched.step / nce3095k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3095k.step / nce3095k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 926a761be03d0009, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF