component
NCE3095G
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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"package": "DFN5x6-8L",
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"distributor_check": {
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"source": "Component Ocean /api/assign-pns",
"digikey": {
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"status": "no match"
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"mouser": {
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"pins": [
{
"number": "1",
"name": "S",
"type": "passive",
"description": "Source of the N-channel MOSFET (pin 1 of the source group S1-S3); drain-source voltage limit 30 V."
},
{
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{
"number": "3",
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"description": "Source of the N-channel MOSFET (pin 3 of the source group S1-S3); pulsed drain current up to 300 A."
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{
"number": "4",
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},
{
"number": "5",
"name": "D",
"type": "passive",
"description": "Drain of the MOSFET (pin 5 of the drain group D5-D8, connected to the exposed drain pad); drain-source voltage limit 30 V."
},
{
"number": "6",
"name": "D",
"type": "passive",
"description": "Drain of the MOSFET (pin 6 of the drain group D5-D8, connected to the exposed drain pad); continuous drain current 95 A."
},
{
"number": "7",
"name": "D",
"type": "passive",
"description": "Drain of the MOSFET (pin 7 of the drain group D5-D8, connected to the exposed drain pad); pulsed drain current up to 300 A."
},
{
"number": "8",
"name": "D",
"type": "passive",
"description": "Drain of the MOSFET (pin 8 of the drain group D5-D8, connected to the exposed drain pad); RDS(ON) 4.1 mΩ typical at VGS=10 V."
},
{
"number": "9",
"name": "EP",
"type": "passive",
"description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
}
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"guard_notes": [
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"exposed pad 9 added from the footprint",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
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"at": "2026-10-10T01:04:23"
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