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NCE3090K

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE3090K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE3090K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20 V absolute maximum, with RDS(ON) specified at VGS=10V and 4.5V, threshold 1 V min to 2.5 V max at 250 µA.
2 D passive Drain (center stub, connected to the exposed drain tab); VDS 30 V maximum, continuous ID 90 A, pulsed IDM 200 A.
3 S passive Source; body diode forward current IS up to 90 A with VSD max 1.2 V at 20 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 90 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 63.6 A TC=100℃ 1
Pulsed Drain Current IDM 200 A 1
Maximum Power Dissipation PD 105 W 1
Single pulse avalanche energy EAS 380 mJ Note 5: Tj=25℃, VDD=15V,VG=10V,L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 30 38 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 4.1 5.8 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 5.9 8 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 20 S VDS=5V,ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=20A 2
Diode Forward Current IS 90 A 2
Thermal Resistance, Junction-to-Case RθJC 1.43 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 2
Input Capacitance Clss 3433 PF 2
Output Capacitance Coss 360 PF 2
Reverse Transfer Capacitance Crss 287 PF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 12 nS VDD=15V,ID=20A VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 15 nS VDD=15V,ID=20A VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 40 nS VDD=15V,ID=20A VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 14 nS VDD=15V,ID=20A VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 60 nC VDS=15V,ID=45A, VGS=10V 2
Gate-Source Charge Qgs 8.2 nC VDS=15V,ID=45A, VGS=10V 2
Gate-Drain Charge Qgd 16.4 nC VDS=15V,ID=45A, VGS=10V 2
Reverse Recovery Time trr 29 nS TJ = 25°C, IF = 20A di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 32 nC TJ = 25°C, IF = 20A di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCE3090K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce3090k-etched.step / nce3090k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3090k.step / nce3090k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 5e01e14aa5b47d90, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF