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NCE3080KA

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
viewers nce3080ka: viewers · Ray 24d ago
nce3080ka-etched.glb nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce3080ka-etched.step nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce3080ka-hero.glb nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce3080ka-hero.overlay.json nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
nce3080ka.glb Publish 0.1.0 · Ray 24d ago
nce3080ka.kicad_mod Publish 0.1.0 · Ray 24d ago
nce3080ka.kicad_sym Publish 0.1.0 · Ray 24d ago
nce3080ka.lbr Publish 0.1.0 · Ray 24d ago
nce3080ka.step Publish 0.1.0 · Ray 24d ago
package.json nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json nce3080ka: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md nce3080ka: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 19d ago

NCE3080KA

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE3080KA from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS rated ±20 V absolute maximum, with threshold VGS(th) 1 V min, 1.4 V max at ID=250μA.
2 D passive Drain, shown as the center lead and the metal tab in the marking drawing; VDS 30 V, continuous ID 80 A, pulsed IDM 170 A.
3 S passive Source; body-diode forward current IS is 80 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 80 A 1
Drain Current-Continuous ID (100℃) 50 A TC=100℃ 1
Pulsed Drain Current IDM 170 A 1
Maximum Power Dissipation PD 83 W 1
Single pulse avalanche energy EAS 306 mJ Note 5: Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω, IAS=35A 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.1 1.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 5.5 6.5 mΩ VGS=10V, ID=30A 2
Drain-Source On-State Resistance RDS(ON) 7.5 10 mΩ VGS=5V, ID=24A 2
Forward Transconductance gFS 20 S VDS=5V,ID=24A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=24A 2
Diode Forward Current IS 80 A 2
Reverse Recovery Time trr 32 50 nS TJ = 25°C, IF = 30A, di/dt = 100A/μs (Note 3) 2
Reverse Recovery Charge Qrr 12 20 nC TJ = 25°C, IF = 30A, di/dt = 100A/μs (Note 3) 2
Derating factor 0.56 W/℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.8 ℃/W Note 2 2

CAD (KiCad official)

  • Symbol: NCE3080KA
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce3080ka-etched.step / nce3080ka-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3080ka.step / nce3080ka.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 4d332e1a97ebcc5e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF