component
NCE3080K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE3080K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE3080K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS rated ±20 V with a gate threshold of 1 V min to 3 V max at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated 30 V with continuous ID of 80 A and pulsed IDM of 170 A. |
| 3 | S | passive | Source; continuous diode forward current IS is 80 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 80 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 50 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 170 | A | 1 | |||
| Maximum Power Dissipation | PD | 83 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 306 | mJ | Note 5: Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω, IAS=35A | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.8 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 5.5 | 6.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 7.5 | 10 | mΩ | VGS=5V, ID=24A | 2 | |
| Forward Transconductance | gFS | 20 | S | VDS=5V,ID=24A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=24A | 2 | ||
| Diode Forward Current | IS | 80 | A | 2 | |||
| Reverse Recovery Time | trr | 32 | 50 | nS | 2 | ||
| Reverse Recovery Charge | Qrr | 12 | 20 | nC | TJ = 25°C, IF = 80A, di/dt = 100A/μs (Note3) | 2 |
CAD (KiCad official)
- Symbol:
NCE3080K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce3080k-etched.step/nce3080k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3080k.step/nce3080k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
4a8b177a8d5c2fdc, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).