component
NCE3009S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| nce3009s-etched.glb | 17d ago |
| nce3009s-etched.step | 17d ago |
| nce3009s-hero.glb | 17d ago |
| nce3009s-hero.overlay.json | 17d ago |
| nce3009s.glb | 17d ago |
| nce3009s.kicad_mod | 17d ago |
| nce3009s.kicad_sym | 17d ago |
| nce3009s.lbr | 17d ago |
| nce3009s.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
NCE3009S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE3009S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied to pins 2 and 3 (VDS 30V, ID 9A device). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied to pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied to pins 1 and 2. |
| 4 | G | input | Gate terminal; VGS rated ±20V, threshold 1V min to 2.2V max at 250µA. |
| 5 | D | passive | Drain terminal, tied to pins 6, 7 and 8; VDS max 30V. |
| 6 | D | passive | Drain terminal, tied to pins 5, 7 and 8; VDS max 30V. |
| 7 | D | passive | Drain terminal, tied to pins 5, 6 and 8; VDS max 30V. |
| 8 | D | passive | Drain terminal, tied to pins 5, 6 and 7; VDS max 30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 9 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 6.4 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 50 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 7.6 | 9 | mΩ | VGS=10V, ID=9A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 11.5 | 15 | mΩ | VGS=4.5V, ID=9A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=5V,ID=9A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=9A | 2 | ||
| Diode Forward Current | IS | 9 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE3009S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce3009s-etched.step/nce3009s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3009s.step/nce3009s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
8cafd662d611df4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).