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NCE3008XM

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE3008XM

Wuxi NCE Power Semiconductor · MOSFETs · SOT-89-3L

NCE3008XM from Wuxi NCE Power Semiconductor, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the N-channel MOSFET, with a maximum gate-source voltage of ±12 V and operation with gate voltages as low as 2.5 V.
2 D passive Drain; rated for VDS = 30 V and continuous drain current ID = 8 A (30 A pulsed).
3 S passive Source; the body diode from source to drain is rated for IS = 8 A continuous with a forward voltage of at most 1.2 V.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-89-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 0.9 1.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 33 55 mΩ VGS=2.5V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 26 39 mΩ VGS=4.5V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 24 33 mΩ VGS=10V, ID=8A 2
Forward Transconductance gFS 10 S VDS=5V,ID=8A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=8A 2
Diode Forward Current IS 8 A 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 8 A TA=25℃ 1
Drain Current-Pulsed IDM 30 A TA=25℃ 1
Maximum Power Dissipation PD 3.5 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 35 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec 1
Input Capacitance Clss 595 PF VDS=15V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 39 PF VDS=15V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 36 PF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 3 nS VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 4.5 nS VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 25 nS VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 3.8 nS VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 9.3 nC VDS=15V,ID=8A, VGS=4.5V 2
Gate-Source Charge Qgs 1.6 nC VDS=15V,ID=8A, VGS=4.5V 2
Gate-Drain Charge Qgd 2.1 nC VDS=15V,ID=8A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: NCE3008XM
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3L (KiCad packages3D, STEP)
  • 3D model files: nce3008xm-etched.step / nce3008xm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3008xm.step / nce3008xm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 755406675b57983a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF