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NCE2312A
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE2312A
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23
NCE2312A from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±10V maximum, with RDS(ON) < 35mΩ at VGS=2.5V and < 28mΩ at VGS=4.5V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous body-diode forward current IS is 5A maximum. |
| 3 | D | passive | Drain; VDS maximum 20V, continuous drain current ID 5A and pulsed IDM 15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.65 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 20 | 35 | mΩ | VGS=2.5V, ID=4.5 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 17 | 28 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V,VDS=0V | 2 | |
| Forward Transconductance | gFS | 25 | S | VDS=15V,ID=5A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1A | 2 | ||
| Diode Forward Current | IS | 5 | A | Note 2 | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | 5 | A | 1 | |||
| Drain Current-Pulsed | IDM | 15 | A | Note 1 (pulse width limited by maximum junction temperature) | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Surface mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
NCE2312A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nce2312a-etched.step/nce2312a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce2312a.step/nce2312a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
82f5be0bb9538b56, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).