component
NCE2305
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 29d ago |
| viewers | 29d ago |
| nce2305-etched.glb | 29d ago |
| nce2305-etched.step | 29d ago |
| nce2305-hero.glb | 29d ago |
| nce2305-hero.overlay.json | 29d ago |
| nce2305.glb | 29d ago |
| nce2305.kicad_mod | 29d ago |
| nce2305.kicad_sym | 29d ago |
| nce2305.lbr | 29d ago |
| nce2305.step | 29d ago |
| package.json | 29d ago |
| page.json | 24d ago |
| README.md | 24d ago |
NCE2305
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23
NCE2305 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12V absolute maximum, with RDS(ON) specified down to VGS=-2.5V. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage rating is -20V. |
| 3 | D | passive | Drain; continuous drain current -4.1A at TC=25℃ and pulsed -15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4.1 | A | TC =25℃ | 1 | ||
| Continuous Drain Current | ID | -3.2 | A | TC =70℃ | 1 | ||
| Continuous Drain Current | ID | -3 | A | TA =25℃ | 1 | ||
| Continuous Drain Current | ID | -2.3 | A | TA =70℃ | 1 | ||
| Drain Current-Pulsed | IDM | -15 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.7 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 74 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.45 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 39 | 52 | mΩ | VGS=-4.5V, ID=-4.1A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 58 | 75 | mΩ | VGS=-2.5V, ID=-3A | 2 | |
| Forward Transconductance | gFS | 6 | S | VDS=-5V,ID=-2A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-1.6A | 2 | ||
| Diode Forward Current | IS | 1.6 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE2305 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nce2305-etched.step/nce2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce2305.step/nce2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
fe2a6a5bc2cf7912, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).