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NCE2302

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Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE2302

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23

NCE2302 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated VGS ±12 V, and the gate threshold is 0.5 to 1.2 V at VDS=VGS, ID=250 µA.
2 S passive Source terminal; diode forward current is rated 4 A (IS), with the source-drain forward voltage specified at IS=2.9 A.
3 D passive Drain terminal; drain-source voltage is rated 20 V, continuous drain current 4 A, and pulsed drain current 10 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 4 A 1
Drain Current-Pulsed IDM 10 A Note 1 1
Maximum Power Dissipation PD 1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V ID=250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.85 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (VGS=2.5V) RDS(ON) 37 59 mΩ VGS=2.5V, ID=2.5A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 30 45 mΩ VGS=4.5V, ID=2.9A 2
Turn-on Delay Time td(on) 10 15 nS VDD=10V,ID=2.9A VGS=4.5V,RGEN=6Ω 2
Turn-on Rise Time tr 50 85 nS VDD=10V,ID=2.9A VGS=4.5V,RGEN=6Ω 2
Turn-Off Delay Time td(off) 17 45 nS VDD=10V,ID=2.9A VGS=4.5V,RGEN=6Ω 2
Turn-Off Fall Time tf 10 20 nS VDD=10V,ID=2.9A VGS=4.5V,RGEN=6Ω 2
Total Gate Charge Qg 4 10 nC VDS=10V,ID=2.9A, VGS=4.5V 2
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=2.9A 2
Diode Forward Current IS 4 A Note 2 2

CAD (KiCad official)

  • Symbol: NCE2302
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nce2302-etched.step / nce2302-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce2302.step / nce2302.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 ef6d19b57eb99b40, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF