component
NCE2060K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
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| nce2060k-etched.glb | 24d ago |
| nce2060k-etched.step | 24d ago |
| nce2060k-hero.glb | 24d ago |
| nce2060k-hero.overlay.json | 24d ago |
| nce2060k.glb | 24d ago |
| nce2060k.kicad_mod | 24d ago |
| nce2060k.kicad_sym | 24d ago |
| nce2060k.lbr | 24d ago |
| nce2060k.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
NCE2060K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE2060K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with VGS(th) of 0.5 V min to 1.0 V max at ID=250μA. |
| 2 | D | passive | Drain, also the exposed tab; rated for VDS of 20 V and continuous ID of 60 A. |
| 3 | S | passive | Source; continuous diode forward current IS is 60 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 60 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 42 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 210 | A | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 200 | mJ | Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω (Note 5) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 4.8 | 6 | mΩ | VGS=4.5V, ID=20 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 6.2 | 9 | mΩ | VGS=2.5V, ID=15A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Current (Note 2) | IS | 60 | A | 2 | |||
| Derating factor | 0.48 | W/℃ | 1 | ||||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | 2.1 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
NCE2060K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce2060k-etched.step/nce2060k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce2060k.step/nce2060k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
fb7242909d7d424d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).