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NCE15TD60BF

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Wuxi NCE Power Semiconductor IGBTs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistornce15td60bffactory-2.0.0extractor-text

Verified NCE15TD60BF

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NCE15TD60BF · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qpsc1tyi/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): the datasheet dimensions give no height or body size to compare (datasheet p.9)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ nce15td60bf.kicad_sym✓ nce15td60bf.kicad_mod✓ nce15td60bf.step
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NCE15TD60BF

Wuxi NCE Power Semiconductor · IGBTs · TO-220F

NCE15TD60BF from Wuxi NCE Power Semiconductor, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the IGBT, with gate-emitter voltage rated at ±30 V maximum and threshold voltage of 4.0 V min to 6.0 V max at IC=1mA.
2 C passive Collector; collector-emitter voltage rated at 600 V maximum, with 15 A continuous collector current at TC=100 °C.
3 E passive Emitter; main current return terminal of the IGBT, with a co-packaged anti-parallel diode rated at 15 A continuous forward current at TC=100 °C.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 600 V 1
Gate-Emitter Voltage VGES -30 30 V 1
Collector Current IC 30 A TC = 25 °C 1
Collector Current IC 15 A TC = 100 °C 1
Pulsed Collector Current ICplus 45 A tp limited by Tjmax 1
Turn-off safe operating area 45 A VCE=600V, Tj=150°C 1
Diode Continuous Forward Current IF 15 A TC = 100 °C 1
Diode Maximum Forward Current IFM 45 A 1
Power Dissipation PD 34 W TC = 25 °C 1
Power Dissipation PD 13.6 W TC = 100 °C 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 150 °C 1
Maximum Temperature for Soldering TL 260 °C 1
Collector-Emitter Breakdown Voltage V(BR)CES 600 V VGE=0V,ICE=1mA 2
Collector-Emitter Leakage Current ICES 4 uA VGE =0V,VCE=600V 2
Gate to Emitter Forward Leakage IGES(F) 100 nA VGE=+30V,VCE=0V 2
Gate to Source Reverse Leakage IGES(R) 100 nA VGE=-30V,VCE =0V 2
Collector-Emitter Saturation Voltage VCE(sat) 1.7 1.9 V IC=15A, VGE=15V, Tj=25°C 2
Gate Threshold Voltage VGE(th) 4 6 V IC=1mA,VCE=VGE 2
Diode Forward Voltage VFM 1.5 1.7 V IF=15A 2
Collector-Emitter Saturation Voltage VCE(sat) 1.9 V IC=15A, VGE=15V, Tj=100°C 2
Input Capacitance Cies 1635 pF VCE=25V,VGE=0V, f=1MHz 2
Output Capacitance Coes 50 pF VCE=25V,VGE=0V, f=1MHz 2
Reverse Transfer Capacitance Cres 30 pF VCE=25V,VGE=0V, f=1MHz 2
Total Gate Charge Qg 63 nC VCC=480V, IC=15A, VGE=15V 2
Gate to Emitter Charge Qge 15 nC VCC=480V, IC=15A, VGE=15V 2
Gate to Collector Charge Qgc 26 nC VCC=480V, IC=15A, VGE=15V 2
Short circuit collector current IC(SC) 82 A VGE=15V,VCC≤400V, tSC≤3us,Tj≤150°C 2
Turn-on Delay Time td(ON) 16 ns VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Rise Time tr 12 ns VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Turn-Off Delay Time td(OFF) 124 ns VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Fall Time tf 12 ns VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Turn-On Switching Loss Eon 0.25 mJ VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Turn-Off Switching Loss Eoff 0.12 mJ VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Total Switching Loss Ets 0.37 mJ VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load 2
Reverse Recovery Time Trr 170 ns IF=15A, di/dt=200A/us 2
Diode Peak Reverse Recovery Current IRRM 6.5 A IF=15A, di/dt=200A/us 2
Reverse Recovery Charge Qrr 0.7 uC IF=15A, di/dt=200A/us 2
Thermal Resistance, Junction to case for IGBT RθJC 3.67 °C/W 2
Thermal Resistance, Junction to case for Diode RθJC 3.97 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 78 °C/W 2
Short circuit withstand time tsc 3 us VGE=15V, VCC≤400V, allowed number of short circuits <1000, time between short circuits ≥1.0s, Tj≤150°C 1

CAD (KiCad official)

  • Symbol: NCE15TD60BF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (10 pp, sha256 9b40865f9cd37c36, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF