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Contents

README

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NCE15TD60BD

Wuxi NCE Power Semiconductor · IGBT Transistors / Modules · TO-263

NCE15TD60BD from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; gate threshold VGE(th) 4.0-6.0 V (IC=1 mA, VCE=VGE); rated ±30 V gate-emitter voltage; total gate charge Qg = 63 nC typical at VCC=480 V, IC=15 A, VGE=15 V.
2 C passive Collector (also connected to heatsink tab); rated VCES = 600 V, IC = 30 A (TC=25 °C) / 15 A (TC=100 °C), ICpulse = 45 A; VCE(sat) = 1.7 V typ / 1.9 V max at IC=15 A, VGE=15 V, Tj=25 °C.
3 E passive Emitter; also serves as anode reference for the integrated anti-parallel freewheeling diode (IF continuous = 15 A @ TC=100 °C, VFM = 1.5 V typ at IF=15 A, Trr = 170 ns typ).
TAB C_TAB passive Exposed heatsink tab, internally connected to Collector (pin 2); provides primary thermal path, RθJC = 1.19 °C/W (IGBT), PD = 105 W max at TC=25 °C.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: NCE15TD60BD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: nce15td60bd-etched.step / nce15td60bd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce15td60bd.step / nce15td60bd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (10 pp, sha256 9b40865f9cd37c36, retrieved 2026-09-29, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF