component
NCE15P25JK
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 1mo ago |
| nce15p25jk-etched.glb | 23d ago |
| nce15p25jk-etched.step | 23d ago |
| nce15p25jk-hero.glb | 23d ago |
| nce15p25jk-hero.overlay.json | 23d ago |
| nce15p25jk.glb | 1mo ago |
| nce15p25jk.kicad_mod | 1mo ago |
| nce15p25jk.kicad_sym | 1mo ago |
| nce15p25jk.lbr | 1mo ago |
| nce15p25jk.step | 1mo ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 25d ago |
NCE15P25JK
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE15P25JK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.5 V min to -3 V max at ID=-250μA. |
| 2 | D | passive | Drain (center position and exposed tab); drain-source voltage rated -145 V and continuous drain current -25 A. |
| 3 | S | passive | Source; continuous diode forward current IS of -25 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -145 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -25 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | -17 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -140 | A | 1 | |||
| Maximum Power Dissipation | PD | 160 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJc | 0.8 | ℃/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | ℃/W | Note 2: 1in2 FR-4 board, 2oz Cu, still air, TA=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -145 | -155 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-145V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.5 | -1.9 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 120 | 150 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 131 | 160 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=-5V,ID=-20A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-25A | 2 | ||
| Diode Forward Current | IS | -25 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE15P25JK - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce15p25jk-etched.step/nce15p25jk-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce15p25jk.step/nce15p25jk.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
62b90c2ce3890426, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).