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NCE12P09S

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE12P09S

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE12P09S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; VDS rated -12V and continuous drain current -9A.
2 S passive Source of the P-channel MOSFET; VDS rated -12V and continuous drain current -9A.
3 S passive Source of the P-channel MOSFET; VDS rated -12V and continuous drain current -9A.
4 G input Gate of the P-channel MOSFET; VGS absolute maximum ±12V with threshold of -0.4V to -1V at -250μA.
5 D passive Drain of the P-channel MOSFET; VDS -12V, ID -9A continuous and -36A pulsed.
6 D passive Drain of the P-channel MOSFET; VDS -12V, ID -9A continuous and -36A pulsed.
7 D passive Drain of the P-channel MOSFET; VDS -12V, ID -9A continuous and -36A pulsed.
8 D passive Drain of the P-channel MOSFET; VDS -12V, ID -9A continuous and -36A pulsed.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID -9 A 1
Drain Current-Pulsed IDM -36 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage V(BR)DSS -12 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-12V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 11.5 18 mΩ VGS=-4.5V, ID=-9A 2
Drain-Source On-State Resistance RDS(ON) 14 22 mΩ VGS=-2.5V, ID=-8A 2
Forward Transconductance gFS 20 S VDS=-5V,ID=-9A 2
Total Gate Charge Qg 35 48 nC 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-9A 2
Diode Forward Current IS -9 A 2
Input Capacitance Clss 2700 PF 2
Output Capacitance Coss 680 PF 2
Reverse Transfer Capacitance Crss 590 PF VDS=-10V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 11 nS 2
Turn-on Rise Time tr 35 nS 2
Turn-Off Delay Time td(off) 30 nS 2
Turn-Off Fall Time tf 10 nS VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 10 nC VDS=-6V,ID=-9A, VGS=-4.5V 2

CAD (KiCad official)

  • Symbol: NCE12P09S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce12p09s-etched.step / nce12p09s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce12p09s.step / nce12p09s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 759bb526b27fb6d1, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF