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NCE0224AK

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE0224AK

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE0224AK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20V and a typical threshold of 1.5V (1.0V min, 2.5V max at 250μA).
2 D passive Drain, also the exposed tab; rated VDS 200V and continuous drain current 24A (17A at TC=100℃).
3 S passive Source; the body diode runs from source to drain with continuous forward current of 24A and VSD max 1.2V at IS=15A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 24 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 17 A TC=100℃ 1
Pulsed Drain Current IDM 100 A 1
Maximum Power Dissipation PD 150 W 1
Single pulse avalanche energy EAS 250 mJ Note 5: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 200 220 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 62 80 mΩ VGS=10V, ID=15A 2
Forward Transconductance gFS 30 S VDS=10V,ID=15A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=15A 2
Diode Forward Current IS 24 A Note 2: surface mounted on FR4 board, t ≤ 10 sec 2
Thermal Resistance, Junction-to-Case RθJC 1 /W ℃ Note 2: surface mounted on FR4 board, t ≤ 10 sec 2
Input Capacitance Clss 4200 PF 2
Output Capacitance Coss 163 PF 2
Reverse Transfer Capacitance Crss 75 PF VDS=25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 10 nS 2
Turn-on Rise Time tr 18 nS 2
Turn-Off Delay Time td(off) 22 nS 2
Turn-Off Fall Time tf 5 nS VDD=100V,ID=15A VGS=10V,RGEN=2.5Ω 2
Total Gate Charge Qg 60 nC 2
Gate-Source Charge Qgs 19 nC 2
Gate-Drain Charge Qgd 17 nC VDS=100V,ID=15A, VGS=10V 2
Reverse Recovery Time trr 90 nS 2
Reverse Recovery Charge Qrr 300 nC TJ = 25°C, IF = 15A di/dt = 100A/μs(Note3) 2

CAD (KiCad official)

  • Symbol: NCE0224AK
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce0224ak-etched.step / nce0224ak-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce0224ak.step / nce0224ak.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 bb917a09bb5988d7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF