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NCE01ND03S
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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE01ND03S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE01ND03S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 100V, ID 3A). |
| 2 | G2 | input | Gate of MOSFET 2, rated ±20V VGS maximum, VGS(th) 1.0 to 2.0V. |
| 3 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 100V, ID 3A). |
| 4 | G1 | input | Gate of MOSFET 1, rated ±20V VGS maximum, VGS(th) 1.0 to 2.0V. |
| 5 | D1 | passive | Drain of MOSFET 1, rated 100V VDS and 3A continuous. |
| 6 | D1 | passive | Drain of MOSFET 1, rated 100V VDS and 3A continuous (tied to pin 5). |
| 7 | D2 | passive | Drain of MOSFET 2, rated 100V VDS and 3A continuous. |
| 8 | D2 | passive | Drain of MOSFET 2, rated 100V VDS and 3A continuous (tied to pin 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 2.1 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | Note 1 (repetitive, pulse width limited by max junction temperature) | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | 85 | ℃/W | Note 2: mounted on 1in² FR-4 board, 2oz Cu, still air, TA=25°C, t ≤ 10 s | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | 110 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 95 | 130 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 100 | 140 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Forward Transconductance | gFS | 3.5 | S | VDS=5V,ID=3A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=3A | 2 | ||
| Diode Forward Current | IS | 3 | A | 2 | |||
| Input Capacitance | Clss | 730 | PF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 37 | PF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 27 | PF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 11 | nS | VDD=50V, RL=15Ω, VGS=10V, RG=2.5Ω | 2 | ||
| Turn-on Rise Time | tr | 7.4 | nS | VDD=50V, RL=15Ω, VGS=10V, RG=2.5Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 35 | nS | VDD=50V, RL=15Ω, VGS=10V, RG=2.5Ω | 2 | ||
| Turn-Off Fall Time | tf | 9.1 | nS | VDD=50V, RL=15Ω, VGS=10V, RG=2.5Ω | 2 | ||
| Total Gate Charge | Qg | 21.5 | nC | VDS=50V,ID=3A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 3.2 | nC | VDS=50V,ID=3A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 6 | nC | VDS=50V,ID=3A, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 26 | nS | TJ = 25°C, IF =3A, di/dt = 100A/μs (Note 3) | 2 | ||
| Reverse Recovery Charge | Qrr | 27 | nC | TJ = 25°C, IF =3A, di/dt = 100A/μs (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
NCE01ND03S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce01nd03s-etched.step/nce01nd03s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce01nd03s.step/nce01nd03s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
7c48ffafdcec9de6, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).