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NCE0140K2

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE0140K2

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE0140K2 from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2 V min to 4 V max at 250 μA.
2 D passive Drain; also the exposed tab, rated VDS 100 V and 40 A continuous (160 A pulsed).
3 S passive Source; continuous diode forward current IS is 40 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 40 A TC=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 28 A TC=100℃ 1
Pulsed Drain Current IDM 160 A TC=25℃ 1
Maximum Power Dissipation PD 140 W TC=25℃ 1
Single pulse avalanche energy EAS 520 mJ Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 100 110 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 14.5 17 mΩ VGS=10V, ID=28A 2
Forward Transconductance gFS 32 S VDS=25V, ID=28A 2
Diode Forward Voltage VSD 0.85 1.2 V VGS=0V, IS=28A 2
Diode Forward Current IS 40 A 2
Thermal Resistance, Junction-to-Case RθJC 1.07 ℃/W 2

CAD (KiCad official)

  • Symbol: NCE0140K2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce0140k2-etched.step / nce0140k2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce0140k2.step / nce0140k2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 7413c99a30aca476, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF