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NCE0130KA

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE0130KA

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE0130KA from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20V with a threshold of 1.3V min to 2.5V max at ID=250μA.
2 D passive Drain, also connected to the tab; rated for VDS of 100V and continuous ID of 30A.
3 S passive Source; body diode continuous forward current IS is 30A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 30 A TC=25℃ 1
Drain Current-Continuous (100℃) ID (100℃) 21 A TC=100℃ 1
Pulsed Drain Current IDM 120 A Note 1 1
Maximum Power Dissipation PD 85 W TC=25℃ 1
Derating factor 0.57 W/℃ 1
Single pulse avalanche energy EAS 200 mJ Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.8 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 100 115 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.3 1.9 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 25 32 mΩ VGS=10V, ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 30 A 2
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Input Capacitance Clss 2479 PF VDS=50V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 96 PF VDS=50V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 79 PF VDS=50V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 9 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 9 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 32 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 8 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 67.2 nC VDS=50V,ID=10A,VGS=10V 2
Gate-Source Charge Qgs 9.4 nC VDS=50V,ID=10A,VGS=10V 2
Gate-Drain Charge Qgd 15.5 nC VDS=50V,ID=10A,VGS=10V 2
Reverse Recovery Time trr 32 nS TJ=25°C, IF=10A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 53 nC TJ=25°C, IF=10A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: NCE0130KA
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce0130ka-etched.step / nce0130ka-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce0130ka.step / nce0130ka.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 160a4f87d4485fd1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF