# NCE0130A

**Wuxi NCE Power Semiconductor** · MOSFETs · TO-220F-3

NCE0130A from Wuxi NCE Power Semiconductor, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with Vgs(th) 1.3 to 2.5 V at 250 µA. |
| 2 | D | passive | Drain; VDS 100 V max, continuous ID 30 A at TC=25°C and 120 A pulsed, also connected to the tab. |
| 3 | S | passive | Source; body-diode forward current IS 30 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | 115 |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.9 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 25 | 32 | mΩ | VGS=10V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=10A | 2 |
| Diode Forward Current | IS |  |  | 30 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 30 | A |  | 1 |
| Drain Current-Continuous | ID(100℃) |  |  | 21 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A | Note 1 (repetitive rating, pulse width limited by maximum junction temperature) | 1 |
| Maximum Power Dissipation | PD |  |  | 85 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 200 | mJ | Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| VDS Spike | VDS |  |  | 120 | V | 10μs | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 1.8 |  | ℃/W | Note 2 (surface mounted on FR4 board, t ≤ 10 sec) | 1 |

## CAD (KiCad official)

- Symbol: `NCE0130A`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889119413964800) (7 pp, sha256 `ba8794c04181b3b3`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce0130a-datasheet.pdf)